डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP3710 | Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advance |
International Rectifier |
|
IRFP3710 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFP3710,IIRFP3710
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤25mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
|
IRFP3710PBF | Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |