डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP352 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalan |
Inchange Semiconductor |
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IRFP352 | FIELD EFFECT POWER TRANSISTOR ~D~~
FIELD EFFECT POVVER TRANSISTOR
IRFP352,353
13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low o |
GE |
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IRFP352R | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP352(R)
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Res |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |