डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP350 | N-Channel MOSFET Transistor isc N-Channel MOSFET ransistor
FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) ·Fast Switching ·100% avalanc |
Inchange Semiconductor |
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IRFP350 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFP350
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
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IRFP350 | Power MOSFET |
International Rectifier |
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IRFP350 | N-Channel Power MOSFET www.DataSheet4U.com
IRFP350
Data Sheet July 1999 File Number
2319.4
16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced powe |
Intersil Corporation |
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IRFP350 | Power MOSFET Power MOSFET
IRFP350, SiHFP350
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
400 VGS = 10 V
150
Qgs (nC)
23
Qgd (nC)
80
Configuration
Single
0.30
TO-247AC
D
S
D G
G
S N-Cha |
Vishay |
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IRFP350A | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) ·Fast Switching ·100% avalan |
Inchange Semiconductor |
|
IRFP350A | Advanced Power MOSFET www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Low |
Fairchild Semiconductor |
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