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IRFP240 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP240
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resist |
Inchange Semiconductor |
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IRFP240 | Power MOSFET |
International Rectifier |
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IRFP240 | N-Channel Power MOSFET IRFP240
Data Sheet July 1999 File Number
2087.4
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te |
Intersil Corporation |
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IRFP240 | N-Channel Power MOSFET Data Sheet
January 2002
IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guar |
Fairchild Semiconductor |
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IRFP240 | Power MOSFET IRFP240, SiHFP240
www.DataSheet4U.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single
D
FEATURES
200 0.18
• � |
Vishay Siliconix |
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IRFP240A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP240A
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resis |
Inchange Semiconductor |
|
IRFP240A | Power MOSFET
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Samsung |
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