IRFP150N डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFP150N，IIRFP150N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Model

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

IRFP150N HEXFET Power MOSFET FEATURES z Avalanche Process Technology z Dynamic dv/dt Rating z 175 Operating Temperature z Fast Switching z Fully Avalanche Rated Description Fifth Generation HEXFETs from Artsch

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