IRFP150 डाटा शीट PDF( Datasheet )

Semiconductor July 1998 IRFP150, IRFP151, IRFP152, IRFP153 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs Features • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω •

IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Voss 100 V 100 V 60 V 60 V 100 V 100 V 60

Power MOSFET IRFP150, SiHFP150 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 140 29 68 Single 0.055 TO-247AC D S D G G S N-Channel

N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 2002 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon ga

iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150A FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(M