IRFP054 डाटा शीट PDF( Datasheet )

Power MOSFET IRFP054, SiHFP054 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 160 48 54 Single 0.014 TO-247AC D S D G G S N-Channel M

PD - 9.1382A IRFP054N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.012Ω G I

isc N-Channel MOSFET Transistor IRFP054N，IIRFP054N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

• Lead-Free PD- 95423 IRFP054NPbF www.irf.com 1 06/16/04 IRFP054NPbF 2 www.irf.com IRFP054NPbF www.irf.com 3 IRFP054NPbF 4 www.irf.com IRFP054NPbF www.irf.com 5 IRFP054NPbF 6 www.irf.com IRFP054NP

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·Simple drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for r

PD - 94110 IRFP054V HEXFET® Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SM