डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP048R | Power MOSFET www.vishay.com
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 38 Single
0.018
D
TO-247AC
G
S
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Vishay Siliconix |
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IRFP048R | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFP048R
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum |
INCHANGE |
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IRFP048R | Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |