IRFP048N डाटा शीट PDF( Datasheet )

PD - 9.1409A IRFP048N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016Ω G S

isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

• Lead-Free PD- 95422 IRFP048NPbF www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NP