IRFP048 डाटा शीट PDF( Datasheet )

Power MOSFET IRFP048, SiHFP048 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 10 V 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Single 0.018 TO-247AC D S D G G S N-Cha

iscN-Channel MOSFET Transistor IRFP048 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

PD - 9.1409A IRFP048N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016Ω G S

isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

• Lead-Free PD- 95422 IRFP048NPbF www.irf.com 1 06/16/04 IRFP048NPbF 2 www.irf.com IRFP048NPbF www.irf.com 3 IRFP048NPbF 4 www.irf.com IRFP048NPbF www.irf.com 5 IRFP048NPbF 6 www.irf.com IRFP048NP

• Lead-Free PD- 95671 IRFP048PbF 1 IRFP048PbF 2 IRFP048PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS S E