डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIZ44N | Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated
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Description
Fifth Generation HEXFETs from International |
International Rectifier |
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IRFIZ44N | Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRFIZ44NPbF
HEXFET® Power MOSFET |
Infineon |
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IRFIZ44N | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum |
INCHANGE |
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IRFIZ44NPbF | Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRFIZ44NPbF
HEXFET® Power MOSFET |
Infineon |
|
IRFIZ44NPBF | HEXFET Power MOSFET PD - 94836
IRFIZ44NPbF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |