डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIBE20G | Power MOSFET |
International Rectifier |
|
IRFIBE20G | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFIBE20G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =6.5Ω (MAX) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
|
IRFIBE20G | Power MOSFET IRFIBE20G, SiHFIBE20G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800
VGS = 10 V
6.5
38
5.0
21
Single
D TO-220 FULLPAK
GDS
G
S N |
Vishay |
|
IRFIBE20GPBF | HEXFET Power MOSFET PD- 95648
IRFIBE20GPbF
Lead-Free
www.irf.com
1
7/26/04
IRFIBE20GPbF
2
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IRFIBE20GPbF
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3
IRFIBE20GPbF
4
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IRFIBE20GPbF
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5
IRFIBE20GPbF
6
www.irf.co |
International Rectifier |
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