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IRFF310 | N-Channel Power MOSFET IRFF310
Data Sheet March 1999 File Number 1888.3
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, |
Intersil Corporation |
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IRFF310 | HEXFET TRANSISTORS PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF310
400V 3.6Ω
ID 1.25A
IRFF310 JANTX2N6786 JANTXV2N6786
REF:M |
International Rectifier |
|
IRFF310 | FIELD EFFECT POWER TRANSISTOR ~~D~[F~ IRFF310,311
FIELD EFFECT POWER TRANSISTOR
1.35 AMPERES 400, 350 VOLTS
ROS(ON) = 3.6 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology |
GE |
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