डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFBE30 | Power MOSFET |
International Rectifier |
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IRFBE30 | Power MOSFET www.vishay.com
IRFBE30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
800
VGS = 10 V
3.0
78
9.6 |
Vishay |
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IRFBE30 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBE30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.0Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
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IRFBE30L | Power MOSFET IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800 VGS = 10 V
78 9.6 45 Single
3.0
I2PAK (TO-262 |
Vishay |
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IRFBE30LPBF | HEXFET Power MOSFET www.DataSheet4U.com
PD - 95507
IRFBE30SPbF IRFBE30LPbF
O O O O O O
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFE |
International Rectifier |
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IRFBE30PBF | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFBE30PBF
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
perf |
INCHANGE |
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IRFBE30PBF | Power MOSFET • Lead-Free
PD - 94945
IRFBE30PbF
Document Number: 91118
1/15/04
www.vishay.com 1
IRFBE30PbF
Document Number: 91118
www.vishay.com 2
IRFBE30PbF
Document Number: 91118
www.vishay.com 3
IRFBE30PbF
Do |
International Rectifier |
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