IRFBC30 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology

® IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET TYPE IRFBC30 s s s s s V DSS 600 V R DS(on) < 2.2 Ω ID 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100

www.vishay.com IRFBC30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 31 4.6

iscN-Channel MOSFET Transistor IRFBC30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot

PD- 91889A SMPS MOSFET IRFBC30A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l VDSS 600V Rds(on) max 2.2Ω ID 3.6A Benef

iscN-Channel MOSFET Transistor IRFBC30A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-