डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFB4310 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB4310, IIRFB4310
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche teste |
Inchange Semiconductor |
|
IRFB4310 | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Worldwide Best RDS(on) in TO-2 |
International Rectifier |
|
IRFB4310PbF | Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRFB4310Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB4310Z, IIRFB4310Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tes |
INCHANGE |
|
IRFB4310ZPbF | Power MOSFET Applications
D
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Aval |
International Rectifier |
|
IRFB4310ZPBF | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operati |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |