डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9Z34NS | Power MOSFET PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Av |
International Rectifier |
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IRF9Z34NS | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
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IRF9Z34NSPBF | MOSFET Lead-Free
PD- 95769
IRF9Z34NSPbF IRF9Z34NLPbF
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IRF9Z3 |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |