डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9530 | P-Channel Power MOSFET IRF9530, RF1S9530SM
Data Sheet July 1999 File Number
2221.4
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced po |
Intersil Corporation |
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IRF9530 | Power MOSFET |
International Rectifier |
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IRF9530 | P-Channel Power MOSFETs Data Sheet
IRF9530, RF1S9530SM
January 2002
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs des |
Fairchild Semiconductor |
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IRF9530 | Power MOSFET www.vishay.com
IRF9530
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-100 VGS = -10 V
38 6.8 21 S |
Vishay |
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IRF9530 | P-Channel MOSFET isc P-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF9530
FEATURES ·-12A,-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max) ·SOA is power dissipation |
INCHANGE |
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IRF9530-220M | P-Channel Power MOSFET IRF9530-220M
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
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Seme LAB |
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IRF9530N | Power MOSFET PD - 91482C
IRF9530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V RDS(on) = 0 |
International Rectifier |
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