IRF840S डाटा शीट PDF( Datasheet )

$GYDQFHG 3RZHU 026)(7 IRF840S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

www.vishay.com IRF840S, SiHF840S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 D D2PAK (TO-263) G

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

PD-95136 IRF840SPbF • Lead-Free D2Pak www.DataSheet4U.com www.irf.com 1 05/10/04 IRF840SPbF 2 www.irf.com IRF840SPbF www.irf.com 3 IRF840SPbF 4 www.irf.com IRF840SPbF www.irf.com 5 IRF840SPbF