IRF730 डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistan

® IRF730 N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220 PowerMESH™ MOSFET TYPE IRF730 s s s s s V DSS 400 V R DS(on) < 1Ω ID 5.5 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANC

IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET de

IRF730 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package D Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating D Fast Switching D Simple Drive Requirements D Ease of P

www.vishay.com IRF730 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 1.0 38 5.7

SEMICONDUCTOR IRF730 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5.5A, 400Volts) DESCRIPTION The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. T