डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF712 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF712
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Inchange Semiconductor |
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IRF712 | N-Channel MOSFET IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching |
ART CHIP |
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IRF712 | FIELD EFFECT POWER TRANSISTOR ~[gjD~[¥i~
FIELD EFFECT POVVER TRANSISTOR
IRF712,713
1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve l |
GE |
www.DataSheet.in | 2017 | संपर्क |