डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF7105 | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching
Description
Fifth Generation HEXFETs from |
International Rectifier |
|
IRF7105PBF | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free
Description
Fifth Generation |
International Rectifier |
|
IRF7105QPBF | Power MOSFET END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free |
International Rectifier |
|
IRF7105TRPBF-1 | Power MOSFET VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
N-CH 25
0.1
9.4
3.5
P-CH -25
0.25
10
-2.3
V Ω nC A
IRF7105TRPbF-1
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 |
International Rectifier |
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