IRF710 डाटा शीट PDF( Datasheet )

IRF710 Data Sheet June 1999 File Number 2310.3 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device perform

IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching

Power MOSFET IRF710, SiHF710 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 17 3.4 8.5 Single D TO-220AB 3.6 S D G G S N-Channel MO

www.DataSheet4U.com PD - 9.871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l F

www.DataSheet4U.com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Le