डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF642 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF642
|
Inchange Semiconductor |
|
IRF642 | N-Channel Power MOSFET |
Fairchild Semiconductor |
|
IRF642 | FIELD EFFECT POWER TRANSISTOR ~[R1D~LP~
FIELD EFFECT POWER TRANSISTOR
IRF642,643
16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve lo |
GE |
www.DataSheet.in | 2017 | संपर्क |