डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF640S | N-Channel MOSFET ®
IRF640S
N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET
TYPE IRF640S
s s s s
V DSS 200 V
R DS(on) < 0.18 Ω
ID 18 A
TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LO |
STMicroelectronics |
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IRF640S | Power MOSFET PD -90902B
IRF640S/L
HEXFET® Power MOSFET
l l l l l l l
Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Sw |
International Rectifier |
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IRF640S | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
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NXP |
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IRF640S | Power MOSFET www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
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Vishay |
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