डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF633 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =0.6Ω ·8A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·Hig |
Inchange Semiconductor |
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IRF633 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF633 | FIELD EFFECT POWER TRANSISTOR ~D~[F~lr
FIELD EFFECT POWER TRANSISTOR
IRF632,633
8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve |
GE |
www.DataSheet.in | 2017 | संपर्क |