डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF612 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF612
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Inchange Semiconductor |
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IRF612 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF612 | FIELD EFFECT POWER TRANSISTOR DO D[]~[F~
FIELD EFFECT POWER TRANSISTOR
IRF612,613
2.0 AMPERES 200, 150 VOLTS
ROS(ON) = 2.4 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve l |
GE |
www.DataSheet.in | 2017 | संपर्क |