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IRF610 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
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Inchange Semiconductor |
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IRF610 | N-Channel Power MOSFET IRF610
Data Sheet June 1999 File Number
1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te |
Intersil Corporation |
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IRF610 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF610 | Power MOSFET Power MOSFET
IRF610, SiHF610
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
8.2 1.8 4.5 Single
1.5
TO-220AB
D
G
S D G
S N-Channel |
Vishay |
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IRF6100 | HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance
l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
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International Rectifier |
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IRF6100PBF | HEXFET Power MOSFET PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested |
International Rectifier |
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IRF610A | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF610A
FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area |
Inchange Semiconductor |
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