IRF540N डाटा शीट PDF( Datasheet )

Data Sheet January 2002 IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF540N D G S Features • Ultra Low On-Resistance - rDS(O

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching G Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from In

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET® Power MOSFETs from Internatio

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description G Advanced HEXFET® Power M

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from Internationa