डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF5305 | Power MOSFET PD - 91385B
IRF5305
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -55V RDS(on) = 0.0 |
International Rectifier |
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IRF5305 | P-Channel MOSFET isc P-Channel MOSFET Transistor
IRF5305,IIRF5305
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device |
INCHANGE |
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IRF5305L | Power MOSFET PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala |
International Rectifier |
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IRF5305L | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio |
INCHANGE |
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IRF5305LPBF | HEXFET Power MOSFET PD - 95957
IRF5305S/LPbF
• Lead-Free
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International Rectifier |
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IRF5305PbF | Power MOSFET Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
G
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier |
International Rectifier |
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IRF5305S | Power MOSFET PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |