IRF521 डाटा शीट PDF( Datasheet )

IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V Ro

PD - 91434A IRF5210 HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D

isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot varia

PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avala

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio