डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF3710Z | HEXFET Power MOSFET PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Descri |
International Rectifier |
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IRF3710Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3710Z,IIRF3710Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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IRF3710ZGPbF | Power MOSFET PD - 96349
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halog |
International Rectifier |
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IRF3710ZL | HEXFET Power MOSFET PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Descri |
International Rectifier |
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IRF3710ZL | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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IRF3710ZLPbF | HEXFET Power MOSFET PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Descri |
International Rectifier |
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IRF3710ZPbF | HEXFET Power MOSFET PD - 95466A
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Descri |
International Rectifier |
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