IRF350 डाटा शीट PDF( Datasheet )

IRF350 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package D Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling G S Abs

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF350 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at El

IRF350 Data Sheet March 1999 File Number 1826.3 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as

PD - 90339F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A  IRF350 JANTX2N6768 JANTXV2N6768 [REF:M