डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF3415 | Power MOSFET PD - 91477D
IRF3415
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042Ω I |
International Rectifier |
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IRF3415 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRF3415,IIRF3415
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IRF3415L | Power MOSFET PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Ra |
International Rectifier |
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IRF3415L | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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IRF3415LPBF | HEXFET Power MOSFET • Lead-Free
PD - 95112
IRF3415S/LPbF
www.irf.com
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IRF3415S/LPbF
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IRF3415S/LPbF
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IRF3415S/LPbF
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IRF3415S/LPbF
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IRF3415S/LPbF
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International Rectifier |
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IRF3415PBF | HEXFET Power MOSFET PD - 94963
IRF3415PbF
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 150V RDS(on) = 0 |
International Rectifier |
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IRF3415S | Power MOSFET PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Ra |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |