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IRF341 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF341
DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged
APPLICATIONS ·High voltage ·High speed application
ABSO |
Inchange Semiconductor |
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IRF341 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF341 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF341 | N-Channel Power MOSFETs IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed appli |
ART CHIP |
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IRF3415 | Power MOSFET PD - 91477D
IRF3415
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042Ω I |
International Rectifier |
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IRF3415 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRF3415,IIRF3415
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IRF3415L | Power MOSFET PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Ra |
International Rectifier |
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