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IRF330 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF330
DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resista |
Inchange Semiconductor |
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IRF330 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF330 | N-Channel Power MOSFET IRF330
Data Sheet March 1999 File Number
1570.4
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t |
Intersil Corporation |
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IRF330 | N-Channel Power MOSFET PD - 90335F
IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL
Product Summary
Part Number IRF330 BVDS |
International Rectifier |
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IRF330 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF3305 | Power MOSFET PD - 95879
AUTOMOTIVE MOSFET
Features
O
IRF3305
HEXFET® Power MOSFET
D
O O O O
Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged |
International Rectifier |
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IRF3305 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3305, IIRF3305
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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