IRF321 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRF321 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF321
DESCRIPTION ·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage
: VDSS= 350V(Min) ·Static Drain-Source On-Resistan |
 Inchange Semiconductor |
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| IRF321 | N-Channel Power MOSFET |
 Fairchild Semiconductor |
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| IRF321 | N-Channel Power MOSFET |
 Samsung semiconductor |
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| IRF321 | N-Channel Power MOSFET Semiconductor
IRF320, IRF321, IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
 Intersil Corporation |
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| IRF321 | N-Channel Power MOSFETs Semiconductor
IRF320, IRF321, IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
 Harris |
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