IRF3205S डाटा शीट PDF( Datasheet )

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205S ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations f

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205STRLPBF ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variat