डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF320 | N-Channel Power MOSFET |
Samsung semiconductor |
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IRF320 | N-Channel Power MOSFET Semiconductor
IRF320, IRF321, IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
Intersil Corporation |
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IRF320 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF320 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF320
DESCRIPTION ·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage
: VDSS= 400V(Min) ·Static Drain-Source On-Resistan |
Inchange Semiconductor |
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IRF320 | N-Channel Power MOSFETs Semiconductor
IRF320, IRF321, IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors |
Harris |
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IRF3205 | N-Channel Trench Process Power MOSFET Transistor IRF3205
®
Pb Free Plating Product
IRF3205
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching |
Thinki Semiconductor |
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IRF3205 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3205, IIRF3205
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |