IRF2804S डाटा शीट PDF( Datasheet )

PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive

IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS =

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o

PD - 96891 AUTOMOTIVE MOSFET IRF2804S-7P Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allow

PD - 97057A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Pow

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET uti