| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Samsung semiconductor |
N-Channel Power MOSFET |
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Intersil Corporation |
N-Channel Power MOSFET • 8.0A and 9.0A, 150V and 200V • rDS(ON) = 0.4Ω and 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
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Inchange Semiconductor |
N-Channel MOSFET Transistor SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.0A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 I |
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