डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF200 | HIGH POWER WIRE WOUND RESISTOR POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Applications
Non-inductive, flat shaped aluminum housed wire wound fixe |
ETC |
|
IRF200B211 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRF200B211,IIRF200B211
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤170mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IRF200B211 | Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications � |
International Rectifier |
|
IRF200P222 | MOSFET IRF200P222
MOSFET
StrongIRFET™
Applications
UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redunda |
Infineon |
|
IRF200P223 | N-Channel MOSFET INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF200P223,IIRF200P223
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11.5mΩ ·Enhancement mode:
Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA) ·1 |
INCHANGE |
|
IRF200P223 | MOSFET IRF200P223
MOSFET
StrongIRFET™
D
Applications
UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redu |
Infineon |
|
IRF200S234 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |