डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF1404 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404,IIRF1404
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
Inchange Semiconductor |
|
IRF1404 | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Seventh Generation HEXFET |
International Rectifier |
|
IRF1404L | Power MOSFET PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ®
l l
IRF1404S |
International Rectifier |
|
IRF1404LPbF | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Seventh Generation HEXFET® Power M |
International Rectifier |
|
IRF1404PbF | HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Seventh Generation HEXFET® Power |
International Rectifier |
|
IRF1404S | Power MOSFET PD -93853C
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ®
l l
IRF1404S |
International Rectifier |
|
IRF1404S | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |