IRF1310N डाटा शीट PDF( Datasheet )

PD - 91504A IRF1310N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.036Ω

isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.036Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

PD - 91514B IRF1310NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

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• Lead-Free PD - 95690 IRF1310NPbF www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1

PD - 91514B IRF1310NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche