डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF1205 | HEXFET Power MOSFET PROVISIONAL
l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation MOSFETs from International Rectifier ut |
International Rectifier |
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IRF120 | N-CHANNEL POWER MOSFET | Samsung semiconductor |
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IRF120 | Power MOSFET | Intersil Corporation |
|
IRF120 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF1205 | HEXFET Power MOSFET | International Rectifier |
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IRF120 | N-Channel MOSFET Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |