IRF120 डाटा शीट PDF( Datasheet )

Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transisto

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF120 DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

PROVISIONAL l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated G Description Fifth Generation MOSFETs from International Rectifier ut