IRF1010NS डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRF1010NS | Power MOSFET PD - 94171
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
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HEXFET® Power MOSFET
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IRF1010NS |
 International Rectifier |
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| IRF1010NS | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
 INCHANGE |
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| IRF1010NSPBF | Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
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IRF1010NSPbF IRF1010NLPbF
HEXFET® |
International Rectifier |
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