डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF1010N | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power M |
International Rectifier |
|
IRF1010N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1010N, IIRF1010N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRF1010NL | Power MOSFET PD - 94171
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRF1010NS |
International Rectifier |
|
IRF1010NLPBF | Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRF1010NSPbF IRF1010NLPbF
HEXFET® |
International Rectifier |
|
IRF1010NPBF | Power MOSFET PD - 94966
IRF1010NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descr |
International Rectifier |
|
IRF1010NS | Power MOSFET PD - 94171
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRF1010NS |
International Rectifier |
|
IRF1010NS | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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