IRF1010EZ डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRF1010EZ | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRF1010EZ，IIRF1010EZ
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot |
 INCHANGE |
|
| IRF1010EZ | AUTOMOTIVE MOSFET PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating |
 International Rectifier |
|
| IRF1010EZL | AUTOMOTIVE MOSFET PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating |
International Rectifier |
|
| IRF1010EZLPbF | POWER MOSFET www.DataSheet4U.com
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rat |
International Rectifier |
|
| IRF1010EZPbF | POWER MOSFET www.DataSheet4U.com
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rat |
International Rectifier |
|
| IRF1010EZS | AUTOMOTIVE MOSFET PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating |
International Rectifier |
|
| IRF1010EZS | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IRF1010EZS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations f |
INCHANGE |
शेयर लिंक :
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