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IRF1010E डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

भाग संख्या विवरण मैन्युफैक्चरर्स PDF
IRF1010E   Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M
International Rectifier
International Rectifier
PDF
IRF1010E   N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E, IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested
INCHANGE
INCHANGE
PDF
IRF1010EL   Power MOSFET

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFE
International Rectifier
International Rectifier
PDF
IRF1010ELPbF   HEXFET Power MOSFET

PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1
International Rectifier
International Rectifier
PDF
IRF1010EPBF   Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M
International Rectifier
International Rectifier
PDF
IRF1010ES   Power MOSFET

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFE
International Rectifier
International Rectifier
PDF
IRF1010ES   N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-
INCHANGE
INCHANGE
PDF



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